Joseph W. Hemsky

Deep Centers in as Grown and Electron-Irradiated N-GaN
Fang, Z. Q., Polenta, L., Hemsky, J. W. & Look, D. C., 2000, p. 35-42. 8 p.
Research output: Contribution to conference › Paper › peer-review
Point defect characterization of GaN and ZnO
Look, D. C., Reynolds, D. C., Fang, Z. Q., Hemsky, J. W., Sizelove, J. R. & Jones, R. L., Dec 1 1999, In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 66, 1, p. 30-32 3 p.
Research output: Contribution to journal › Conference article › peer-review
Production and annealing of electron irradiation damage in ZnO
Look, D. C., Reynolds, D. C., Hemsky, J. W., Jones, R. L. & Sizelove, J. R., Aug 9 1999, In: Applied Physics Letters. 75, 6, p. 811-813 3 p.
Research output: Contribution to journal › Article › peer-review
Residual native shallow donor in ZnO
Look, D. C., Hemsky, J. W. & Sizelove, J. R., 1999, In: Physical Review Letters. 82, 12, p. 2552-2555 4 p.
Research output: Contribution to journal › Article › peer-review
Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO
Look, D. C., Reynolds, D. C., Hemsky, J. W., Sizelove, J. R., Jones, R. L., Litton, C. W., Wille, T., Cantwell, G. & Harsch, W. C., 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159). IEEE, p. 301-304 4 p.
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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