1550-nm time-domain study of ErAs:GaAs photoconductive switches as a function of the erbium concentration

Matthieu Martin; John R. Middendorf; Elliott R. Brown

doi:10.1109/NAECON.2014.7045825

1550-nm time-domain study of ErAs:GaAs photoconductive switches as a function of the erbium concentration

Matthieu Martin, John R. Middendorf, Elliott R. Brown

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2014 IEEE National Aerospace and Electronics Conference, NAECON 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	313-314
Number of pages	2
ISBN (Electronic)	9781479946891
DOIs	https://doi.org/10.1109/NAECON.2014.7045825
State	Published - Feb 19 2015
Externally published	Yes
Event	IEEE National Aerospace and Electronics Conference, NAECON 2014 - Dayton, United States Duration: Jun 24 2014 → Jun 27 2014

Publication series

Name	National Aerospace and Electronics Conference, Proceedings of the IEEE
Volume	2015-February

Conference

Conference	IEEE National Aerospace and Electronics Conference, NAECON 2014
Country/Territory	United States
City	Dayton
Period	6/24/14 → 6/27/14

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Aerospace Engineering

Keywords

Antenna measurements
Antennas
Dynamic range
Erbium
Gallium arsenide
Optical beams
Time-domain analysis

Access to Document

10.1109/NAECON.2014.7045825

Cite this

Martin, M., Middendorf, J. R., & Brown, E. R. (2015). 1550-nm time-domain study of ErAs:GaAs photoconductive switches as a function of the erbium concentration. In 2014 IEEE National Aerospace and Electronics Conference, NAECON 2014 (pp. 313-314). Article 7045825 (National Aerospace and Electronics Conference, Proceedings of the IEEE; Vol. 2015-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NAECON.2014.7045825

1550-nm time-domain study of ErAs:GaAs photoconductive switches as a function of the erbium concentration. / Martin, Matthieu; Middendorf, John R.; Brown, Elliott R.
2014 IEEE National Aerospace and Electronics Conference, NAECON 2014. Institute of Electrical and Electronics Engineers Inc., 2015. p. 313-314 7045825 (National Aerospace and Electronics Conference, Proceedings of the IEEE; Vol. 2015-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Martin, M, Middendorf, JR & Brown, ER 2015, 1550-nm time-domain study of ErAs:GaAs photoconductive switches as a function of the erbium concentration. in 2014 IEEE National Aerospace and Electronics Conference, NAECON 2014., 7045825, National Aerospace and Electronics Conference, Proceedings of the IEEE, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 313-314, IEEE National Aerospace and Electronics Conference, NAECON 2014, Dayton, United States, 6/24/14. https://doi.org/10.1109/NAECON.2014.7045825

Martin M, Middendorf JR, Brown ER. 1550-nm time-domain study of ErAs:GaAs photoconductive switches as a function of the erbium concentration. In 2014 IEEE National Aerospace and Electronics Conference, NAECON 2014. Institute of Electrical and Electronics Engineers Inc. 2015. p. 313-314. 7045825. (National Aerospace and Electronics Conference, Proceedings of the IEEE). doi: 10.1109/NAECON.2014.7045825

Martin, Matthieu ; Middendorf, John R. ; Brown, Elliott R. / 1550-nm time-domain study of ErAs:GaAs photoconductive switches as a function of the erbium concentration. 2014 IEEE National Aerospace and Electronics Conference, NAECON 2014. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 313-314 (National Aerospace and Electronics Conference, Proceedings of the IEEE).

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keywords = "Antenna measurements, Antennas, Dynamic range, Erbium, Gallium arsenide, Optical beams, Time-domain analysis",

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1550-nm time-domain study of ErAs:GaAs photoconductive switches as a function of the erbium concentration

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

Access to Document

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Cite this