@inproceedings{32bac9b0f24c4744949cc0be3d8c24a1,
title = "280-GHz Schottky Diode Detector in 130-NM Digital CMOS",
abstract = "A 2×2 array of Schottky-barrier diode detectors with an on-chip patch antenna and a preamplifier is fabricated in a 130-nm logic CMOS process. Each detector cell can detect the 25-kHz modulated 280-GHz radiation signal with a measured responsivity and noise equivalent power (NEP) of 21kV/W and 360pW/ √Hz, respectively. At 4-MHz modulation frequency, NEP should be about 40pW/ √Hz. At supply voltage of 1.2V, the detector consumes 1.6mW. By utilizing the detector, a millimeter-wave image is constructed, demonstrating its potential application in millimeter-wave and THz imaging.",
keywords = "Condensed matter, Detectors, Diodes, Electric currents, Electromotive force, Electronic circuits, Electronics, Electrostatics, Imaging, Integrated circuits, Logic, Materials science, Noise, Physics",
author = "Ruonan Han and Yaming Zhang and Dominique Coquillat and Julie Hoy and Hadley Videlier and Wojciech Knap and Elliott Brown and Kenneth, \{K. O.\}",
year = "2010",
doi = "10.1109/CICC.2010.5617387",
language = "English",
isbn = "9781424457588",
series = "Proceedings of the Custom Integrated Circuits Conference",
booktitle = "IEEE Custom Integrated Circuits Conference 2010, CICC 2010",
note = "32nd Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2010 ; Conference date: 19-09-2010 Through 22-09-2010",
}