431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

Tyler A. Growden; Weidong Zhang; Elliott R. Brown; David F. Storm; Katurah Hansen; Parastou Fakhimi; David J. Meyer; Paul R. Berger

doi:10.1063/1.5010794

431 kA/cm² peak tunneling current density in GaN/AlN resonant tunneling diodes

Tyler A. Growden, Weidong Zhang, Elliott R. Brown, David F. Storm, Katurah Hansen, Parastou Fakhimi, David J. Meyer, Paul R. Berger

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	033508
Journal	Applied Physics Letters
Volume	112
Issue number	3
DOIs	https://doi.org/10.1063/1.5010794
State	Published - Jan 15 2018
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5010794

Cite this

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title = "431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes",

author = "Growden, {Tyler A.} and Weidong Zhang and Brown, {Elliott R.} and Storm, {David F.} and Katurah Hansen and Parastou Fakhimi and Meyer, {David J.} and Berger, {Paul R.}",

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doi = "10.1063/1.5010794",

language = "English",

volume = "112",

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T1 - 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

AU - Growden, Tyler A.

AU - Zhang, Weidong

AU - Brown, Elliott R.

AU - Storm, David F.

AU - Hansen, Katurah

AU - Fakhimi, Parastou

AU - Meyer, David J.

AU - Berger, Paul R.

PY - 2018/1/15

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U2 - 10.1063/1.5010794

DO - 10.1063/1.5010794

M3 - Article

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SN - 0003-6951

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033508

ER -

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

ASJC Scopus Subject Areas

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431 kA/cm² peak tunneling current density in GaN/AlN resonant tunneling diodes