930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

Tyler A. Growden; Evan M. Cornuelle; David F. Storm; Weidong Zhang; Elliott R. Brown; Logan M. Whitaker; Jeffrey W. Daulton; Richard Molnar; David J. Meyer; Paul R. Berger

doi:10.1063/1.5095056

930 kA/cm² peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

Tyler A. Growden, Evan M. Cornuelle, David F. Storm, Weidong Zhang, Elliott R. Brown, Logan M. Whitaker, Jeffrey W. Daulton, Richard Molnar, David J. Meyer, Paul R. Berger

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	203503
Journal	Applied Physics Letters
Volume	114
Issue number	20
DOIs	https://doi.org/10.1063/1.5095056
State	Published - May 20 2019
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5095056

Cite this

@article{7ca6560f191543b1ac01dbc9d3f92069,

title = "930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template",

author = "Growden, {Tyler A.} and Cornuelle, {Evan M.} and Storm, {David F.} and Weidong Zhang and Brown, {Elliott R.} and Whitaker, {Logan M.} and Daulton, {Jeffrey W.} and Richard Molnar and Meyer, {David J.} and Berger, {Paul R.}",

note = "Publisher Copyright: {\textcopyright} 2019 U.S. Government.",

year = "2019",

month = may,

day = "20",

doi = "10.1063/1.5095056",

language = "English",

volume = "114",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "20",

}

TY - JOUR

T1 - 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

AU - Growden, Tyler A.

AU - Cornuelle, Evan M.

AU - Storm, David F.

AU - Zhang, Weidong

AU - Brown, Elliott R.

AU - Whitaker, Logan M.

AU - Daulton, Jeffrey W.

AU - Molnar, Richard

AU - Meyer, David J.

AU - Berger, Paul R.

PY - 2019/5/20

Y1 - 2019/5/20

UR - http://www.scopus.com/inward/record.url?scp=85066151363&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066151363&partnerID=8YFLogxK

U2 - 10.1063/1.5095056

DO - 10.1063/1.5095056

M3 - Article

AN - SCOPUS:85066151363

SN - 0003-6951

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203503

ER -

930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

ASJC Scopus Subject Areas

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930 kA/cm² peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template