A dominant electrical defect in GaAs

D. C. Look; D. C. Walters; J. R. Meyer

doi:10.1016/0038-1098(82)90652-4

A dominant electrical defect in GaAs

D. C. Look, D. C. Walters, J. R. Meyer

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	745-748
Number of pages	4
Journal	Solid State Communications
Volume	42
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(82)90652-4
State	Published - Jun 1982

ASJC Scopus Subject Areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(82)90652-4

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@article{8933544aff93434c82a23f1d4b69663d,

title = "A dominant electrical defect in GaAs",

author = "Look, \{D. C.\} and Walters, \{D. C.\} and Meyer, \{J. R.\}",

year = "1982",

month = jun,

doi = "10.1016/0038-1098(82)90652-4",

language = "English",

volume = "42",

pages = "745--748",

journal = "Solid State Communications",

issn = "0038-1098",

number = "10",

}

TY - JOUR

T1 - A dominant electrical defect in GaAs

AU - Look, D. C.

AU - Walters, D. C.

AU - Meyer, J. R.

PY - 1982/6

Y1 - 1982/6

UR - https://www.scopus.com/pages/publications/0020140949

UR - https://www.scopus.com/inward/citedby.url?scp=0020140949&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(82)90652-4

DO - 10.1016/0038-1098(82)90652-4

M3 - Article

AN - SCOPUS:0020140949

SN - 0038-1098

VL - 42

SP - 745

EP - 748

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

A dominant electrical defect in GaAs

ASJC Scopus Subject Areas

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