A High Sensitive Piezoresistive Sensor for Stress Measurements in Packaged Semiconductor Die

Ahsan Mian; Jeffrey C. Suhling; Richard C. Jaeger

doi:10.1109/WMED.2006.1678287

A High Sensitive Piezoresistive Sensor for Stress Measurements in Packaged Semiconductor Die

Ahsan Mian, Jeffrey C. Suhling, Richard C. Jaeger

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The authors have developed new two-dimensional piezoresistive stress sensors that replace conventional serpentine resistor rosettes. These sensors are named van der Pauw (VDP) sensors as they are based upon four-terminal van der Pauw type resistance measurements. The resistance of such a sensor is size independent, and hence can be made as small as lithographically possible to capture stresses in critical areas on the surface of a packaged semiconductor die. It was predicted theoretically that the VDP sensor should exhibit a greater than three times improvement in sensitivity relative to resistor sensor rosettes. Then the response of actual VDP structures fabricated on (111) silicon surface was characterized under uniaxial load using four-point-bending tests. These experimental results confirm that the VDP stress sensitivities are more than three times higher than those of their corresponding resistor sensor counterparts

Original language	English
Title of host publication	2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06
Publisher	IEEE
Pages	19-20
Number of pages	2
ISBN (Print)	1-4244-0374-X
DOIs	https://doi.org/10.1109/WMED.2006.1678287
State	Published - 2006
Externally published	Yes
Event	2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06 - Boise, ID, United States Duration: Apr 14 2006 → Apr 14 2006

Conference

Conference	2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06
Country/Territory	United States
City	Boise, ID
Period	4/14/06 → 4/14/06

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Keywords

Piezoresistance
Stress emasurement
Semiconductor device packaging
Resistors
Senso phenomena and characterization
Contacts
Electrical resistance measurement
Surface resistance
Silicon
Mechanical sensors

Disciplines

Materials Science and Engineering
Mechanical Engineering

Access to Document

10.1109/WMED.2006.1678287License: Unspecified

Cite this

Mian, A, Suhling, JC & Jaeger, RC 2006, A High Sensitive Piezoresistive Sensor for Stress Measurements in Packaged Semiconductor Die. in 2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06., 1678287, IEEE, pp. 19-20, 2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06, Boise, ID, United States, 4/14/06. https://doi.org/10.1109/WMED.2006.1678287

@inproceedings{e3b87e35e0db43b58ba34d19908a103e,

title = "A High Sensitive Piezoresistive Sensor for Stress Measurements in Packaged Semiconductor Die",

abstract = " The authors have developed new two-dimensional piezoresistive stress sensors that replace conventional serpentine resistor rosettes. These sensors are named van der Pauw (VDP) sensors as they are based upon four-terminal van der Pauw type resistance measurements. The resistance of such a sensor is size independent, and hence can be made as small as lithographically possible to capture stresses in critical areas on the surface of a packaged semiconductor die. It was predicted theoretically that the VDP sensor should exhibit a greater than three times improvement in sensitivity relative to resistor sensor rosettes. Then the response of actual VDP structures fabricated on (111) silicon surface was characterized under uniaxial load using four-point-bending tests. These experimental results confirm that the VDP stress sensitivities are more than three times higher than those of their corresponding resistor sensor counterparts",

keywords = "Piezoresistance, Stress emasurement, Semiconductor device packaging, Resistors, Senso phenomena and characterization, Contacts, Electrical resistance measurement, Surface resistance, Silicon, Mechanical sensors",

author = "Ahsan Mian and Suhling, {Jeffrey C.} and Jaeger, {Richard C.}",

year = "2006",

doi = "10.1109/WMED.2006.1678287",

language = "English",

isbn = "1-4244-0374-X",

pages = "19--20",

booktitle = "2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06",

publisher = "IEEE",

note = "2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06 ; Conference date: 14-04-2006 Through 14-04-2006",

}

TY - GEN

T1 - A High Sensitive Piezoresistive Sensor for Stress Measurements in Packaged Semiconductor Die

AU - Mian, Ahsan

AU - Suhling, Jeffrey C.

AU - Jaeger, Richard C.

PY - 2006

Y1 - 2006

N2 - The authors have developed new two-dimensional piezoresistive stress sensors that replace conventional serpentine resistor rosettes. These sensors are named van der Pauw (VDP) sensors as they are based upon four-terminal van der Pauw type resistance measurements. The resistance of such a sensor is size independent, and hence can be made as small as lithographically possible to capture stresses in critical areas on the surface of a packaged semiconductor die. It was predicted theoretically that the VDP sensor should exhibit a greater than three times improvement in sensitivity relative to resistor sensor rosettes. Then the response of actual VDP structures fabricated on (111) silicon surface was characterized under uniaxial load using four-point-bending tests. These experimental results confirm that the VDP stress sensitivities are more than three times higher than those of their corresponding resistor sensor counterparts

AB - The authors have developed new two-dimensional piezoresistive stress sensors that replace conventional serpentine resistor rosettes. These sensors are named van der Pauw (VDP) sensors as they are based upon four-terminal van der Pauw type resistance measurements. The resistance of such a sensor is size independent, and hence can be made as small as lithographically possible to capture stresses in critical areas on the surface of a packaged semiconductor die. It was predicted theoretically that the VDP sensor should exhibit a greater than three times improvement in sensitivity relative to resistor sensor rosettes. Then the response of actual VDP structures fabricated on (111) silicon surface was characterized under uniaxial load using four-point-bending tests. These experimental results confirm that the VDP stress sensitivities are more than three times higher than those of their corresponding resistor sensor counterparts

KW - Piezoresistance

KW - Stress emasurement

KW - Semiconductor device packaging

KW - Resistors

KW - Senso phenomena and characterization

KW - Contacts

KW - Electrical resistance measurement

KW - Surface resistance

KW - Silicon

KW - Mechanical sensors

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EP - 20

BT - 2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06

PB - IEEE

T2 - 2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06

Y2 - 14 April 2006 through 14 April 2006

ER -

A High Sensitive Piezoresistive Sensor for Stress Measurements in Packaged Semiconductor Die

Abstract

Conference

ASJC Scopus Subject Areas

Keywords

Disciplines

Access to Document

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