TY - GEN
T1 - A High Sensitivity Piezoresistive Pressure Sensor
AU - Mian, Ahsan
AU - Law, Jesse
PY - 2007/1/10
Y1 - 2007/1/10
N2 - In the current investigation, the piezoresistive effect in a van der Pauw (VDP) stress sensor subjected to biaxial stress was considered. The VDP resistance equations were combined with the silicon piezoresistivity equations to yield relations for the change in resistance of a VDP sensor in terms of the applied state of stress. Then the sensitivity of the VDP sensor to biaxial stress was determined analytically and simulated numerically. The biaxial stress states considered were those for a circular diaphragm under pressure. The numerical calculations involved the use of anisotropic conduction based simulations, implemented in MATLAB using the finite difference technique. The VDP sensitivities to biaxial stress were compared to the sensitivity for the conventional piezoresistive stress sensor. It is observed that the theoretical (based on analytical and numerical results)pressure sensitivity of the new VDP sensor is about three times greater than the conventional counterpart. Analysis was performed for both p-type and n-type Silicon. It is determined that the angle of the VDP sensor with respect to the Silicon crystallographic axes can and should be optimized, depending on Silicon dopant, and the optimum orientation angles are determined. Copyright © 2007 by ASME
AB - In the current investigation, the piezoresistive effect in a van der Pauw (VDP) stress sensor subjected to biaxial stress was considered. The VDP resistance equations were combined with the silicon piezoresistivity equations to yield relations for the change in resistance of a VDP sensor in terms of the applied state of stress. Then the sensitivity of the VDP sensor to biaxial stress was determined analytically and simulated numerically. The biaxial stress states considered were those for a circular diaphragm under pressure. The numerical calculations involved the use of anisotropic conduction based simulations, implemented in MATLAB using the finite difference technique. The VDP sensitivities to biaxial stress were compared to the sensitivity for the conventional piezoresistive stress sensor. It is observed that the theoretical (based on analytical and numerical results)pressure sensitivity of the new VDP sensor is about three times greater than the conventional counterpart. Analysis was performed for both p-type and n-type Silicon. It is determined that the angle of the VDP sensor with respect to the Silicon crystallographic axes can and should be optimized, depending on Silicon dopant, and the optimum orientation angles are determined. Copyright © 2007 by ASME
KW - Diaphragms (Structural)
KW - Electrical resistance
KW - Engineering simulation
KW - Equations
KW - Heat conduction
KW - Pressure
KW - Pressure sensors
KW - Sensors
KW - Silicon
KW - Stress
UR - http://www.scopus.com/inward/record.url?scp=34547935361&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547935361&partnerID=8YFLogxK
UR - https://corescholar.libraries.wright.edu/mme/377
U2 - 10.1115/MNC2007-21300
DO - 10.1115/MNC2007-21300
M3 - Conference contribution
SN - 0791842657
SN - 9780791842652
T3 - Proceedings of the International Conference on Integration and Commercialization of Micro and Nanosystems 2007
SP - 109
EP - 112
BT - Proceedings of the International Conference on Integration and Commercialization of Micro and Nanosystems 2007
T2 - International Conference on Integration and Commercialization of Micro and Nanosystems 2007
Y2 - 10 January 2007 through 13 January 2007
ER -