A new technique for whole-wafer etch-pit density mapping in GaAs

D. C. Look; D. C. Walters; J. S. Sewell; S. C. Dudley; M. G. Mier; J. S. Sizelove

doi:10.1063/1.342984

A new technique for whole-wafer etch-pit density mapping in GaAs

D. C. Look
, D. C. Walters
, J. S. Sewell
, S. C. Dudley
, M. G. Mier
, J. S. Sizelove

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1375-1377
Number of pages	3
Journal	Journal of Applied Physics
Volume	65
Issue number	3
DOIs	https://doi.org/10.1063/1.342984
State	Published - 1989

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.342984

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title = "A new technique for whole-wafer etch-pit density mapping in GaAs",

author = "Look, \{D. C.\} and Walters, \{D. C.\} and Sewell, \{J. S.\} and Dudley, \{S. C.\} and Mier, \{M. G.\} and Sizelove, \{J. S.\}",

year = "1989",

doi = "10.1063/1.342984",

language = "English",

volume = "65",

pages = "1375--1377",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - A new technique for whole-wafer etch-pit density mapping in GaAs

AU - Look, D. C.

AU - Walters, D. C.

AU - Sewell, J. S.

AU - Dudley, S. C.

AU - Mier, M. G.

AU - Sizelove, J. S.

PY - 1989

Y1 - 1989

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DO - 10.1063/1.342984

M3 - Article

AN - SCOPUS:0342825079

SN - 0021-8979

VL - 65

SP - 1375

EP - 1377

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

A new technique for whole-wafer etch-pit density mapping in GaAs

ASJC Scopus Subject Areas

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