A Single Barrier Varactor Quintupler at 170 GHz

Antti V. Räisänen; Timo J. Tolmunen; Mark Natzic; Margaret A. Frerking; Elliott Brown; Hans Grönqvist; Svein M. Nilsen

doi:10.1109/22.372117

A Single Barrier Varactor Quintupler at 170 GHz

Antti V. Räisänen, Timo J. Tolmunen, Mark Natzic, Margaret A. Frerking, Elliott Brown, Hans Grönqvist, Svein M. Nilsen

Research output: Contribution to journal › Article › peer-review

Abstract

InGaAs/InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output frequencies between 148 and 187 GHz. The highest observed flange-to-flange efficiency was 0.78% at an output frequency of 172 GHz. This is nearly four times greater than the best quintupler efficiency obtained for previous SBV varactors made from the GaAs/AlGaAs materials system.

Original language	English
Pages (from-to)	685-688
Number of pages	4
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	43
Issue number	3
DOIs	https://doi.org/10.1109/22.372117
State	Published - Mar 1995
Externally published	Yes

ASJC Scopus Subject Areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/22.372117

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title = "A Single Barrier Varactor Quintupler at 170 GHz",

abstract = "InGaAs/InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output frequencies between 148 and 187 GHz. The highest observed flange-to-flange efficiency was 0.78\% at an output frequency of 172 GHz. This is nearly four times greater than the best quintupler efficiency obtained for previous SBV varactors made from the GaAs/AlGaAs materials system.",

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AU - Räisänen, Antti V.

AU - Tolmunen, Timo J.

AU - Natzic, Mark

AU - Frerking, Margaret A.

AU - Brown, Elliott

AU - Grönqvist, Hans

AU - Nilsen, Svein M.

PY - 1995/3

Y1 - 1995/3

N2 - InGaAs/InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output frequencies between 148 and 187 GHz. The highest observed flange-to-flange efficiency was 0.78% at an output frequency of 172 GHz. This is nearly four times greater than the best quintupler efficiency obtained for previous SBV varactors made from the GaAs/AlGaAs materials system.

AB - InGaAs/InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output frequencies between 148 and 187 GHz. The highest observed flange-to-flange efficiency was 0.78% at an output frequency of 172 GHz. This is nearly four times greater than the best quintupler efficiency obtained for previous SBV varactors made from the GaAs/AlGaAs materials system.

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

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ER -

A Single Barrier Varactor Quintupler at 170 GHz

Abstract

ASJC Scopus Subject Areas

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