Abstract
GaAs Schottky diodes are analyzed as upper-mm-wave or THz direct-detectors in passive imaging arrays. Standard models are used for the current-voltage curve and small-signal responsivity with an assumed ideality factor of 1.2. The 1/f and burst noise properties are adopted from available empirical data, and a small-signal circuit model is used to compute the power delivered by the antenna to the diode. For a 4 sqμm diode area and typical modulation frequencies up to about 100 Hz, the noise-equivalent power (NEP) is found to be limited primarily by the 1/f and burst noise to values above ∼1×10 -10 W/Hz1/2. If the modulation frequency could be increased to ∼1 MHz or above, or if the 1/f and burst noise mechanism could be greatly reduced, the analysis predicts that the Schottky NEP would drop to ∼3×10-12 W/Hz1/2 at room temperature. At video sampling rates (30 s-1), the corresponding noise-equivalent delta temperature (NEΔT) would fall in the range 1-10 K depending on the RF bandwidth.
| Original language | English |
|---|---|
| Pages (from-to) | 2051-2053 |
| Number of pages | 3 |
| Journal | Solid-State Electronics |
| Volume | 48 |
| Issue number | 10-11 |
| DOIs | |
| State | Published - Oct 2004 |
| Event | International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: Dec 10 2003 → Dec 12 2003 |
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Keywords
- Image analysis
- Schottky diodes
- 1f noise
- Temperature
- Gunshot detection systems
- Dectors
- Sensor arrays
- Power system modeling
- Impedance
- Thermal factors
Disciplines
- Electrical and Computer Engineering