Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process

J. O. Crist; D. C. Look

doi:10.1007/BF02651383

Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	773-776
Number of pages	4
Journal	Journal of Electronic Materials
Volume	19
Issue number	8
DOIs	https://doi.org/10.1007/BF02651383
State	Published - Aug 1990

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Activation
GaAs
Implant
Rapid Thermal Annealing

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10.1007/BF02651383

Cite this

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title = "Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process",

keywords = "Activation, GaAs, Implant, Rapid Thermal Annealing",

author = "Crist, \{J. O.\} and Look, \{D. C.\}",

year = "1990",

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doi = "10.1007/BF02651383",

language = "English",

volume = "19",

pages = "773--776",

journal = "Journal of Electronic Materials",

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number = "8",

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AU - Crist, J. O.

AU - Look, D. C.

PY - 1990/8

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KW - Activation

KW - GaAs

KW - Implant

KW - Rapid Thermal Annealing

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

ER -

Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process

ASJC Scopus Subject Areas

Keywords

Access to Document

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