AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

David F. Storm; Tyler A. Growden; Weidong Zhang; Elliott R. Brown; Neeraj Nepal; D. Scott Katzer; Matthew T. Hardy; Paul R. Berger; David J. Meyer

doi:10.1116/1.4977779

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

David F. Storm, Tyler A. Growden, Weidong Zhang, Elliott R. Brown, Neeraj Nepal, D. Scott Katzer, Matthew T. Hardy, Paul R. Berger, David J. Meyer

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	02B110
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	35
Issue number	2
DOIs	https://doi.org/10.1116/1.4977779
State	Published - Mar 1 2017
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4977779

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Storm, D. F., Growden, T. A., Zhang, W., Brown, E. R., Nepal, N., Katzer, D. S., Hardy, M. T., Berger, P. R., & Meyer, D. J. (2017). AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 35(2), Article 02B110. https://doi.org/10.1116/1.4977779

@article{20b691ef25cf46b4af3b36113b70936f,

title = "AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN",

author = "Storm, \{David F.\} and Growden, \{Tyler A.\} and Weidong Zhang and Brown, \{Elliott R.\} and Neeraj Nepal and Katzer, \{D. Scott\} and Hardy, \{Matthew T.\} and Berger, \{Paul R.\} and Meyer, \{David J.\}",

note = "Publisher Copyright: {\textcopyright} 2017 U.S. Government.",

year = "2017",

month = mar,

day = "1",

doi = "10.1116/1.4977779",

language = "English",

volume = "35",

journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",

issn = "2166-2746",

number = "2",

}

TY - JOUR

T1 - AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

AU - Storm, David F.

AU - Growden, Tyler A.

AU - Zhang, Weidong

AU - Brown, Elliott R.

AU - Nepal, Neeraj

AU - Katzer, D. Scott

AU - Hardy, Matthew T.

AU - Berger, Paul R.

AU - Meyer, David J.

PY - 2017/3/1

Y1 - 2017/3/1

UR - https://www.scopus.com/pages/publications/85014423855

UR - https://www.scopus.com/inward/citedby.url?scp=85014423855&partnerID=8YFLogxK

U2 - 10.1116/1.4977779

DO - 10.1116/1.4977779

M3 - Article

AN - SCOPUS:85014423855

SN - 2166-2746

VL - 35

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 2

M1 - 02B110

ER -

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

ASJC Scopus Subject Areas

Access to Document

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