Annealing dynamics of molecular-beam epitaxial GaAs grown at 200°C

D. C. Look; D. C. Walters; G. D. Robinson; J. R. Sizelove; M. G. Mier; C. E. Stutz

doi:10.1063/1.354108

Annealing dynamics of molecular-beam epitaxial GaAs grown at 200°C

D. C. Look, D. C. Walters, G. D. Robinson, J. R. Sizelove, M. G. Mier, C. E. Stutz

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	306-310
Number of pages	5
Journal	Journal of Applied Physics
Volume	74
Issue number	1
DOIs	https://doi.org/10.1063/1.354108
State	Published - 1993

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.354108

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title = "Annealing dynamics of molecular-beam epitaxial GaAs grown at 200°C",

author = "Look, {D. C.} and Walters, {D. C.} and Robinson, {G. D.} and Sizelove, {J. R.} and Mier, {M. G.} and Stutz, {C. E.}",

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AU - Look, D. C.

AU - Walters, D. C.

AU - Robinson, G. D.

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AU - Mier, M. G.

AU - Stutz, C. E.

PY - 1993

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JO - Journal of Applied Physics

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Annealing dynamics of molecular-beam epitaxial GaAs grown at 200°C

ASJC Scopus Subject Areas

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