Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC

D. C. Look; Z. Q. Fang; S. Soloviev; T. S. Sudarshan; J. J. Boeckl

doi:10.1103/PhysRevB.69.195205

Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC

D. C. Look, Z. Q. Fang, S. Soloviev, T. S. Sudarshan, J. J. Boeckl

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	195205
Pages (from-to)	195205-1-195205-4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.69.195205
State	Published - May 2004

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.69.195205

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author = "Look, {D. C.} and Fang, {Z. Q.} and S. Soloviev and Sudarshan, {T. S.} and Boeckl, {J. J.}",

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Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC

ASJC Scopus Subject Areas

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