Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC

D. C. Look; Z. Q. Fang; S. Soloviev; T. S. Sudarshan; J. J. Boeckl

doi:10.1103/PhysRevB.69.195205

Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC

D. C. Look
, Z. Q. Fang
, S. Soloviev
, T. S. Sudarshan
, J. J. Boeckl

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	195205
Pages (from-to)	195205-1-195205-4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.69.195205
State	Published - May 2004

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.69.195205

Cite this

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title = "Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC",

author = "Look, \{D. C.\} and Fang, \{Z. Q.\} and S. Soloviev and Sudarshan, \{T. S.\} and Boeckl, \{J. J.\}",

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AU - Look, D. C.

AU - Fang, Z. Q.

AU - Soloviev, S.

AU - Sudarshan, T. S.

AU - Boeckl, J. J.

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VL - 69

SP - 195205-1-195205-4

JO - Physical Review B - Condensed Matter and Materials Physics

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Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC

ASJC Scopus Subject Areas

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