Anomalous deep center (EC-0.31 eV) in semi-insulating GaAs

Anomalous deep center (E_C-0.31 eV) in semi-insulating GaAs

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	405-410
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	442
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

@article{8567fa33055341e1a9f2489641da0f94,

title = "Anomalous deep center (EC-0.31 eV) in semi-insulating GaAs",

author = "Fang, {Z. Q.} and Look, {D. C.}",

year = "1997",

language = "English",

volume = "442",

pages = "405--410",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

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T1 - Anomalous deep center (EC-0.31 eV) in semi-insulating GaAs

AU - Fang, Z. Q.

AU - Look, D. C.

PY - 1997

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M3 - Conference article

AN - SCOPUS:0030699738

SN - 0272-9172

VL - 442

SP - 405

EP - 410

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -