Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band

D. C. Look; D. C. Walters; M. O. Manasreh; J. R. Sizelove; C. E. Stutz; K. R. Evans

doi:10.1103/PhysRevB.42.3578

Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band

D. C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, C. E. Stutz, K. R. Evans

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3578-3581
Number of pages	4
Journal	Physical Review B
Volume	42
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.42.3578
State	Published - 1990

ASJC Scopus Subject Areas

Condensed Matter Physics

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10.1103/PhysRevB.42.3578

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title = "Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band",

author = "Look, {D. C.} and Walters, {D. C.} and Manasreh, {M. O.} and Sizelove, {J. R.} and Stutz, {C. E.} and Evans, {K. R.}",

year = "1990",

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AU - Sizelove, J. R.

AU - Stutz, C. E.

AU - Evans, K. R.

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Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band

ASJC Scopus Subject Areas

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