Arsenic antisite-related defects in low-temperature MBE grown GaAs

K. Krambrock; M. Linde; J. M. Spaeth; D. C. Look; D. Bliss; W. Walukiewicz

doi:10.1088/0268-1242/7/8/002

Arsenic antisite-related defects in low-temperature MBE grown GaAs

K. Krambrock, M. Linde, J. M. Spaeth, D. C. Look, D. Bliss, W. Walukiewicz

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	002
Pages (from-to)	1037-1041
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	7
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/7/8/002
State	Published - 1992

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/7/8/002

Cite this

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title = "Arsenic antisite-related defects in low-temperature MBE grown GaAs",

author = "K. Krambrock and M. Linde and Spaeth, {J. M.} and Look, {D. C.} and D. Bliss and W. Walukiewicz",

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T1 - Arsenic antisite-related defects in low-temperature MBE grown GaAs

AU - Krambrock, K.

AU - Linde, M.

AU - Spaeth, J. M.

AU - Look, D. C.

AU - Bliss, D.

AU - Walukiewicz, W.

PY - 1992

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AN - SCOPUS:0026910767

SN - 0268-1242

VL - 7

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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M1 - 002

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Arsenic antisite-related defects in low-temperature MBE grown GaAs

ASJC Scopus Subject Areas

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