Abstract
We present a novel shielding method for on-chip transmission lines built on conductive silicon substrates. The shield consists of an artificial dielectric with a very high in-plane dielectric constant, built from two patterned metal layers isolated by a very thin dielectric film. Inserted below an integrated coplanar transmission line, the artificial dielectric layer blocks the electric field of the line from entering the silicon substrate. Shielded coplanar waveguides fabricated on a conventional silicon wafer show a two- to three-fold loss reduction compared to unshielded lines at frequencies below 30 GHz.
Original language | English |
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Article number | 4536891 |
Pages (from-to) | 431-433 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 18 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2008 |
Externally published | Yes |
ASJC Scopus Subject Areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Keywords
- Artificial dielectric layer (ADL)
- High k dielectric
- Integrated transmission line
- Radio frequency (RF)/microwave substrate loss
- Shield
Disciplines
- Electrical and Computer Engineering