As-doped p-type ZnO produced by an evaporation/sputtering process

D. C. Look; G. M. Renlund; R. H. Burgener; J. R. Sizelove

doi:10.1063/1.1825615

As-doped p-type ZnO produced by an evaporation/sputtering process

D. C. Look, G. M. Renlund, R. H. Burgener, J. R. Sizelove

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	3
Pages (from-to)	5269-5271
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	22
DOIs	https://doi.org/10.1063/1.1825615
State	Published - Nov 29 2004

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1825615

Cite this

@article{d89eca1dc0864487965277ca1e169b2d,

title = "As-doped p-type ZnO produced by an evaporation/sputtering process",

author = "Look, {D. C.} and Renlund, {G. M.} and Burgener, {R. H.} and Sizelove, {J. R.}",

year = "2004",

month = nov,

day = "29",

doi = "10.1063/1.1825615",

language = "English",

volume = "85",

pages = "5269--5271",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "22",

}

TY - JOUR

T1 - As-doped p-type ZnO produced by an evaporation/sputtering process

AU - Look, D. C.

AU - Renlund, G. M.

AU - Burgener, R. H.

AU - Sizelove, J. R.

PY - 2004/11/29

Y1 - 2004/11/29

UR - http://www.scopus.com/inward/record.url?scp=11044222901&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11044222901&partnerID=8YFLogxK

U2 - 10.1063/1.1825615

DO - 10.1063/1.1825615

M3 - Article

AN - SCOPUS:11044222901

SN - 0003-6951

VL - 85

SP - 5269

EP - 5271

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 3

ER -

As-doped p-type ZnO produced by an evaporation/sputtering process

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this