Below Band Gap Photoreflectance Transitions in Epitaxial GaN

Phil W. Yu; Jerry D. Clark; David C. Look; C. Q. Chen; Jinwei Yang; Edmundas Koutstis; M. Asif Khan; Denis V. Tsvertkov; Vladimir A. Dmitriev

doi:10.1063/1.1780602

Below Band Gap Photoreflectance Transitions in Epitaxial GaN

Phil W. Yu, Jerry D. Clark, David C. Look, C. Q. Chen, Jinwei Yang, Edmundas Koutstis, M. Asif Khan, Denis V. Tsvertkov, Vladimir A. Dmitriev

Research output: Contribution to journal › Article › peer-review

Abstract

A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.

Original language	American English
Pages (from-to)	1931-1933
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1780602
State	Published - Sep 13 2004

Keywords

Doping
Excitons
Photons
Epitaxy
Mechanical stress
Semiconductor materials
Photoluminescence spectroscopy
Vapor phase deposition
Photoreflectance
Monochromators

Disciplines

Physics

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Below Band Gap Photoreflectance Transitions in Epitaxial GaNFinal published version, 102 KBLicense: CC BY

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title = "Below Band Gap Photoreflectance Transitions in Epitaxial GaN",

abstract = " A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.",

keywords = "Doping, Excitons, Photons, Epitaxy, Mechanical stress, Semiconductor materials, Photoluminescence spectroscopy, Vapor phase deposition, Photoreflectance, Monochromators",

author = "Yu, {Phil W.} and Clark, {Jerry D.} and Look, {David C.} and Chen, {C. Q.} and Jinwei Yang and Edmundas Koutstis and Khan, {M. Asif} and Tsvertkov, {Denis V.} and Dmitriev, {Vladimir A.}",

note = "{\textcopyright} 2004 American Institute of Physics Appl. Phys. Lett. 85, 1931–1933 (2004)",

year = "2004",

month = sep,

day = "13",

doi = "10.1063/1.1780602",

language = "American English",

volume = "85",

pages = "1931--1933",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Below Band Gap Photoreflectance Transitions in Epitaxial GaN

AU - Yu, Phil W.

AU - Clark, Jerry D.

AU - Look, David C.

AU - Chen, C. Q.

AU - Yang, Jinwei

AU - Koutstis, Edmundas

AU - Khan, M. Asif

AU - Tsvertkov, Denis V.

AU - Dmitriev, Vladimir A.

PY - 2004/9/13

Y1 - 2004/9/13

N2 - A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.

AB - A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.

KW - Doping

KW - Excitons

KW - Photons

KW - Epitaxy

KW - Mechanical stress

KW - Semiconductor materials

KW - Photoluminescence spectroscopy

KW - Vapor phase deposition

KW - Photoreflectance

KW - Monochromators

UR - https://corescholar.libraries.wright.edu/physics/87

U2 - 10.1063/1.1780602

DO - 10.1063/1.1780602

M3 - Article

VL - 85

SP - 1931

EP - 1933

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Below Band Gap Photoreflectance Transitions in Epitaxial GaN

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