Below Band Gap Photoreflectance Transitions in Epitaxial GaN

Phil W. Yu; Jerry D. Clark; David C. Look; C. Q. Chen; Jinwei Yang; Edmundas Koutstis; M. Asif Khan; Denis V. Tsvertkov; Vladimir A. Dmitriev

doi:10.1063/1.1780602

Below Band Gap Photoreflectance Transitions in Epitaxial GaN

Phil W. Yu
, Jerry D. Clark
, David C. Look
, C. Q. Chen
, Jinwei Yang
, Edmundas Koutstis
, M. Asif Khan
, Denis V. Tsvertkov
, Vladimir A. Dmitriev

Research output: Contribution to journal › Article › peer-review

Abstract

A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.

Original language	American English
Pages (from-to)	1931-1933
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1780602
State	Published - Sep 13 2004

Keywords

Doping
Excitons
Photons
Epitaxy
Mechanical stress
Semiconductor materials
Photoluminescence spectroscopy
Vapor phase deposition
Photoreflectance
Monochromators

Disciplines

Physics

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10.1063/1.1780602License: CC BY

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Cite this

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title = "Below Band Gap Photoreflectance Transitions in Epitaxial GaN",

abstract = " A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.",

keywords = "Doping, Excitons, Photons, Epitaxy, Mechanical stress, Semiconductor materials, Photoluminescence spectroscopy, Vapor phase deposition, Photoreflectance, Monochromators",

author = "Yu, \{Phil W.\} and Clark, \{Jerry D.\} and Look, \{David C.\} and Chen, \{C. Q.\} and Jinwei Yang and Edmundas Koutstis and Khan, \{M. Asif\} and Tsvertkov, \{Denis V.\} and Dmitriev, \{Vladimir A.\}",

note = "{\textcopyright} 2004 American Institute of Physics Appl. Phys. Lett. 85, 1931–1933 (2004)",

year = "2004",

month = sep,

day = "13",

doi = "10.1063/1.1780602",

language = "American English",

volume = "85",

pages = "1931--1933",

journal = "Applied Physics Letters",

number = "11",

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TY - JOUR

T1 - Below Band Gap Photoreflectance Transitions in Epitaxial GaN

AU - Yu, Phil W.

AU - Clark, Jerry D.

AU - Look, David C.

AU - Chen, C. Q.

AU - Yang, Jinwei

AU - Koutstis, Edmundas

AU - Khan, M. Asif

AU - Tsvertkov, Denis V.

AU - Dmitriev, Vladimir A.

PY - 2004/9/13

Y1 - 2004/9/13

N2 - A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.

AB - A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.

KW - Doping

KW - Excitons

KW - Photons

KW - Epitaxy

KW - Mechanical stress

KW - Semiconductor materials

KW - Photoluminescence spectroscopy

KW - Vapor phase deposition

KW - Photoreflectance

KW - Monochromators

UR - https://corescholar.libraries.wright.edu/physics/87

U2 - 10.1063/1.1780602

DO - 10.1063/1.1780602

M3 - Article

VL - 85

SP - 1931

EP - 1933

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Below Band Gap Photoreflectance Transitions in Epitaxial GaN

Abstract

Keywords

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