CdTe epitaxial layers in ZnSe-based heterostructures

S. Rubini, B. Bonanni, E. Pelucchi, A. Franciosi, Yan Zhuang, G. Bauer

Research output: Contribution to journalArticlepeer-review

Abstract

We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 2 ]ZnSe‖[1 1 0]GaAs and [1 1 0]ZnSe‖[1 1 0]GaAs epitaxial relations.
Original languageAmerican English
Pages (from-to)465-469
JournalJournal of Crystal Growth
Volume201-202
DOIs
StatePublished - May 1999
Externally publishedYes

Keywords

  • CdTe layers
  • ZnSe-based heterostructures
  • Molecular beam epitaxy

Disciplines

  • Electrical and Computer Engineering

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