Abstract
We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 2 ]ZnSe‖[1 1 0]GaAs and [1 1 0]ZnSe‖[1 1 0]GaAs epitaxial relations.
Original language | American English |
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Pages (from-to) | 465-469 |
Journal | Journal of Crystal Growth |
Volume | 201-202 |
DOIs | |
State | Published - May 1999 |
Externally published | Yes |
Keywords
- CdTe layers
- ZnSe-based heterostructures
- Molecular beam epitaxy
Disciplines
- Electrical and Computer Engineering