CdTe epitaxial layers in ZnSe-based heterostructures

S. Rubini; B. Bonanni; E. Pelucchi; A. Franciosi; Yan Zhuang; G. Bauer

doi:10.1016/S0022-0248(98)01377-3

CdTe epitaxial layers in ZnSe-based heterostructures

S. Rubini
, B. Bonanni
, E. Pelucchi
, A. Franciosi
, Yan Zhuang
, G. Bauer

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 2 ]ZnSe‖[1 1 0]GaAs and [1 1 0]ZnSe‖[1 1 0]GaAs epitaxial relations.

Original language	American English
Pages (from-to)	465-469
Journal	Journal of Crystal Growth
Volume	201-202
DOIs	https://doi.org/10.1016/S0022-0248(98)01377-3
State	Published - May 1999
Externally published	Yes

Keywords

CdTe layers
ZnSe-based heterostructures
Molecular beam epitaxy

Disciplines

Electrical and Computer Engineering

Access to Document

10.1016/S0022-0248(98)01377-3

Cite this

@article{616643c7f3f5470784d987e0da217f31,

title = "CdTe epitaxial layers in ZnSe-based heterostructures",

abstract = "We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 2 ]ZnSe‖[1 1 0]GaAs and [1 1 0]ZnSe‖[1 1 0]GaAs epitaxial relations.",

keywords = "CdTe layers, ZnSe-based heterostructures, Molecular beam epitaxy",

author = "S. Rubini and B. Bonanni and E. Pelucchi and A. Franciosi and Yan Zhuang and G. Bauer",

year = "1999",

month = may,

doi = "10.1016/S0022-0248(98)01377-3",

language = "American English",

volume = "201-202",

pages = "465--469",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

}

TY - JOUR

T1 - CdTe epitaxial layers in ZnSe-based heterostructures

AU - Rubini, S.

AU - Bonanni, B.

AU - Pelucchi, E.

AU - Franciosi, A.

AU - Zhuang, Yan

AU - Bauer, G.

PY - 1999/5

Y1 - 1999/5

N2 - We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 2 ]ZnSe‖[1 1 0]GaAs and [1 1 0]ZnSe‖[1 1 0]GaAs epitaxial relations.

AB - We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 2 ]ZnSe‖[1 1 0]GaAs and [1 1 0]ZnSe‖[1 1 0]GaAs epitaxial relations.

KW - CdTe layers

KW - ZnSe-based heterostructures

KW - Molecular beam epitaxy

U2 - 10.1016/S0022-0248(98)01377-3

DO - 10.1016/S0022-0248(98)01377-3

M3 - Article

SN - 0022-0248

VL - 201-202

SP - 465

EP - 469

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -