Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy

Z. Q. Fang, D. C. Look, Wook Kim, H. Morkoc

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	W11.84.1 - W11.84.6
Journal	Materials Research Society Symposium - Proceedings
Volume	595
State	Published - 2000
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 28 1999 → Dec 3 1999

ASJC Scopus Subject Areas

@article{7157ac1c9e70428baede1e0dfdd183cb,

title = "Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy",

author = "Fang, {Z. Q.} and Look, {D. C.} and Wook Kim and H. Morkoc",

year = "2000",

language = "English",

volume = "595",

pages = "W11.84.1 -- W11.84.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 28-11-1999 Through 03-12-1999",

}

TY - JOUR

T1 - Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Kim, Wook

AU - Morkoc, H.

PY - 2000

Y1 - 2000

UR - http://www.scopus.com/inward/record.url?scp=0033706885&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033706885&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033706885

SN - 0272-9172

VL - 595

SP - W11.84.1 - W11.84.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'

Y2 - 28 November 1999 through 3 December 1999

ER -