Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy

Z. Q. Fang, D. C. Look, Wook Kim, H. Morkoç

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	5
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1557/s1092578300005305
State	Published - 2000

ASJC Scopus Subject Areas

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AU - Fang, Z. Q.

AU - Look, D. C.

AU - Kim, Wook

AU - Morkoç, H.

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JF - MRS Internet Journal of Nitride Semiconductor Research

IS - SUPPL. 1

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