Characterization of deep centers in bulk n-type 4H-SiC

Z. Q. Fang, D. C. Look, A. Saxler, W. C. Mitchel

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)706-709
Number of pages4
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
StatePublished - Dec 2001

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Bulk 4H-SiC
  • DLTS
  • Intrinsic and extrinsic defects
  • Nitrogen levels

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