Characterization of deep centers in bulk n-type 4H-SiC

Z. Q. Fang; D. C. Look; A. Saxler; W. C. Mitchel

doi:10.1016/S0921-4526(01)00876-6

Characterization of deep centers in bulk n-type 4H-SiC

Z. Q. Fang, D. C. Look, A. Saxler, W. C. Mitchel

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	706-709
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00876-6
State	Published - Dec 2001

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Bulk 4H-SiC
DLTS
Intrinsic and extrinsic defects
Nitrogen levels

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10.1016/S0921-4526(01)00876-6

Cite this

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title = "Characterization of deep centers in bulk n-type 4H-SiC",

keywords = "Bulk 4H-SiC, DLTS, Intrinsic and extrinsic defects, Nitrogen levels",

author = "Fang, \{Z. Q.\} and Look, \{D. C.\} and A. Saxler and Mitchel, \{W. C.\}",

year = "2001",

month = dec,

doi = "10.1016/S0921-4526(01)00876-6",

language = "English",

volume = "308-310",

pages = "706--709",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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TY - JOUR

T1 - Characterization of deep centers in bulk n-type 4H-SiC

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Saxler, A.

AU - Mitchel, W. C.

PY - 2001/12

Y1 - 2001/12

KW - Bulk 4H-SiC

KW - DLTS

KW - Intrinsic and extrinsic defects

KW - Nitrogen levels

UR - https://www.scopus.com/pages/publications/0035678496

UR - https://www.scopus.com/inward/citedby.url?scp=0035678496&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)00876-6

DO - 10.1016/S0921-4526(01)00876-6

M3 - Article

AN - SCOPUS:0035678496

SN - 0921-4526

VL - 308-310

SP - 706

EP - 709

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Characterization of deep centers in bulk n-type 4H-SiC

ASJC Scopus Subject Areas

Keywords

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