Characterization of deep centers in undoped semi-insulating GaAs substrates by normalized thermally stimulated current spectroscopy: Comparison of 100 and 150 mm wafers

Z. Q. Fang, D. C. Look, M. G. Mier

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)62-68
Number of pages7
JournalJournal of Electronic Materials
Volume27
Issue number2
DOIs
StatePublished - Feb 1998

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Defects
  • Normalized thermally stimulated current (NTSC) spectroscopy
  • Semi-insulating (SI) GaAs

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