Characterization of material device structures

David C. Look; Phil W. Yu; George E. Norris; Dennis C. Walters; William M. Theis

Characterization of material device structures

David C. Look, Phil W. Yu, George E. Norris, Dennis C. Walters, William M. Theis

Future of Semiconductors, a National Science Foundation Program

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Impurities and defects in semiconducting and semi-insulating GaAs and other III-V compounds have been investigated by electrical, optical, and mass spectroscopic techniques. Modulation-doped field-effect transistors have been fabricated and tested. A CAE/CAD environment has been implemented for the design, development, and evaluation of electronic circuitry.

Original language	English
Title of host publication	Final Report, Jan. 1984 - Sep. 1986 Wright State Univ., Dayton, OH.
State	Published - Feb 1 1987

Keywords

Defects
Gallium Arsenides
Hall Effect
Impurities
Ion Implantation
Semiconductors (Materials)
Atomic Structure
Circuits
Insulation
Mass Spectroscopy
Quantum Theory

Disciplines

Materials Science and Engineering

Access to Document

http://adsabs.harvard.edu/abs/1987wrsu.rept.....L

Cite this

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title = "Characterization of material device structures",

abstract = "Impurities and defects in semiconducting and semi-insulating GaAs and other III-V compounds have been investigated by electrical, optical, and mass spectroscopic techniques. Modulation-doped field-effect transistors have been fabricated and tested. A CAE/CAD environment has been implemented for the design, development, and evaluation of electronic circuitry.",

keywords = "Defects, Gallium Arsenides, Hall Effect, Impurities, Ion Implantation, Semiconductors (Materials), Atomic Structure, Circuits, Insulation, Mass Spectroscopy, Quantum Theory",

author = "Look, \{David C.\} and Yu, \{Phil W.\} and Norris, \{George E.\} and Walters, \{Dennis C.\} and Theis, \{William M.\}",

year = "1987",

month = feb,

day = "1",

language = "English",

booktitle = "Final Report, Jan. 1984 - Sep. 1986 Wright State Univ., Dayton, OH.",

}

TY - CHAP

T1 - Characterization of material device structures

AU - Look, David C.

AU - Yu, Phil W.

AU - Norris, George E.

AU - Walters, Dennis C.

AU - Theis, William M.

PY - 1987/2/1

Y1 - 1987/2/1

N2 - Impurities and defects in semiconducting and semi-insulating GaAs and other III-V compounds have been investigated by electrical, optical, and mass spectroscopic techniques. Modulation-doped field-effect transistors have been fabricated and tested. A CAE/CAD environment has been implemented for the design, development, and evaluation of electronic circuitry.

AB - Impurities and defects in semiconducting and semi-insulating GaAs and other III-V compounds have been investigated by electrical, optical, and mass spectroscopic techniques. Modulation-doped field-effect transistors have been fabricated and tested. A CAE/CAD environment has been implemented for the design, development, and evaluation of electronic circuitry.

KW - Defects

KW - Gallium Arsenides

KW - Hall Effect

KW - Impurities

KW - Ion Implantation

KW - Semiconductors (Materials)

KW - Atomic Structure

KW - Circuits

KW - Insulation

KW - Mass Spectroscopy

KW - Quantum Theory

M3 - Chapter

BT - Final Report, Jan. 1984 - Sep. 1986 Wright State Univ., Dayton, OH.

ER -