Characterization of near-surface traps in semiconductors: GaN

D. C. Look; Z. Q. Fang

doi:10.1063/1.1379982

Characterization of near-surface traps in semiconductors: GaN

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	84-86
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	1
DOIs	https://doi.org/10.1063/1.1379982
State	Published - Jul 2 2001

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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author = "Look, {D. C.} and Fang, {Z. Q.}",

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Characterization of near-surface traps in semiconductors: GaN

ASJC Scopus Subject Areas

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