Comparison of GaAs/AlGaAs Quantum-Well IR Detectors Fabricated on GaAs and Si Substrates

Elliott R. Brown; F. W. Smith; George W. Turner; K. A. McIntosh; M. J. Manfra

doi:10.1117/12.138635

Comparison of GaAs/AlGaAs Quantum-Well IR Detectors Fabricated on GaAs and Si Substrates

Elliott R. Brown, F. W. Smith, George W. Turner, K. A. McIntosh, M. J. Manfra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nominally identical multiple-quantum-well detectors have been fabricated on GaAs and Si substrates, and the performance of these detectors has been compared at a temperature of 77 K and a wavelength of 10.2 μm. The two different substrates yield practically identical absorption characteristics, but the detector on the GaAs substrate has an approximately 60% higher specific detectivity because of its higher photoconductive gain and lower dark-current density.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Publ by Society of Photo-Optical Instrumentation Engineers
Pages	228-238
Number of pages	11
ISBN (Print)	0819409081, 9780819409089
DOIs	https://doi.org/10.1117/12.138635
State	Published - 1992
Externally published	Yes
Event	Infrared Detectors: State of the Art - San Diego, CA, USA Duration: Jul 19 1992 → Jul 19 1992

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1735
ISSN (Print)	0277-786X

Conference

Conference	Infrared Detectors: State of the Art
City	San Diego, CA, USA
Period	7/19/92 → 7/19/92

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.138635

Cite this

Brown, E. R., Smith, F. W., Turner, G. W., McIntosh, K. A., & Manfra, M. J. (1992). Comparison of GaAs/AlGaAs Quantum-Well IR Detectors Fabricated on GaAs and Si Substrates. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 228-238). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1735). Publ by Society of Photo-Optical Instrumentation Engineers. https://doi.org/10.1117/12.138635

Comparison of GaAs/AlGaAs Quantum-Well IR Detectors Fabricated on GaAs and Si Substrates. / Brown, Elliott R.; Smith, F. W.; Turner, George W. et al.
Proceedings of SPIE - The International Society for Optical Engineering. Publ by Society of Photo-Optical Instrumentation Engineers, 1992. p. 228-238 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1735).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Brown, ER, Smith, FW, Turner, GW, McIntosh, KA & Manfra, MJ 1992, Comparison of GaAs/AlGaAs Quantum-Well IR Detectors Fabricated on GaAs and Si Substrates. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1735, Publ by Society of Photo-Optical Instrumentation Engineers, pp. 228-238, Infrared Detectors: State of the Art, San Diego, CA, USA, 7/19/92. https://doi.org/10.1117/12.138635

Brown ER, Smith FW, Turner GW, McIntosh KA, Manfra MJ. Comparison of GaAs/AlGaAs Quantum-Well IR Detectors Fabricated on GaAs and Si Substrates. In Proceedings of SPIE - The International Society for Optical Engineering. Publ by Society of Photo-Optical Instrumentation Engineers. 1992. p. 228-238. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.138635

Brown, Elliott R. ; Smith, F. W. ; Turner, George W. et al. / Comparison of GaAs/AlGaAs Quantum-Well IR Detectors Fabricated on GaAs and Si Substrates. Proceedings of SPIE - The International Society for Optical Engineering. Publ by Society of Photo-Optical Instrumentation Engineers, 1992. pp. 228-238 (Proceedings of SPIE - The International Society for Optical Engineering).

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abstract = "Nominally identical multiple-quantum-well detectors have been fabricated on GaAs and Si substrates, and the performance of these detectors has been compared at a temperature of 77 K and a wavelength of 10.2 μm. The two different substrates yield practically identical absorption characteristics, but the detector on the GaAs substrate has an approximately 60\% higher specific detectivity because of its higher photoconductive gain and lower dark-current density.",

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Comparison of GaAs/AlGaAs Quantum-Well IR Detectors Fabricated on GaAs and Si Substrates

Abstract

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Conference

ASJC Scopus Subject Areas

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