@article{288f8710270c48a0b6fe1211f19a31de,
title = "Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures",
keywords = "GaAs/AlGaAs, GaAs/InGaP, high electron mobility transistor (HEMT), organometallic vapor phase epitaxy (OMVPE), pseudo-morphic high electron mobility transistor (PHEMT)",
author = "Jones, {K. A.} and Lareau, {R. T.} and T. Monahan and Flemish, {J. R.} and Pfeffer, {R. L.} and Sherriff, {R. E.} and Litton, {C. W.} and Jones, {R. L.} and Stutz, {C. E.} and Look, {D. C.}",
year = "1995",
month = nov,
doi = "10.1007/BF02676825",
language = "English",
volume = "24",
pages = "1641--1648",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
number = "11",
}