Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures

K. A. Jones; R. T. Lareau; T. Monahan; J. R. Flemish; R. L. Pfeffer; R. E. Sherriff; C. W. Litton; R. L. Jones; C. E. Stutz; D. C. Look

doi:10.1007/BF02676825

Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures

K. A. Jones, R. T. Lareau, T. Monahan, J. R. Flemish, R. L. Pfeffer, R. E. Sherriff, C. W. Litton, R. L. Jones, C. E. Stutz, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1641-1648
Number of pages	8
Journal	Journal of Electronic Materials
Volume	24
Issue number	11
DOIs	https://doi.org/10.1007/BF02676825
State	Published - Nov 1995

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Keywords

GaAs/AlGaAs
GaAs/InGaP
high electron mobility transistor (HEMT)
organometallic vapor phase epitaxy (OMVPE)
pseudo-morphic high electron mobility transistor (PHEMT)

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10.1007/BF02676825

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@article{288f8710270c48a0b6fe1211f19a31de,

title = "Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures",

keywords = "GaAs/AlGaAs, GaAs/InGaP, high electron mobility transistor (HEMT), organometallic vapor phase epitaxy (OMVPE), pseudo-morphic high electron mobility transistor (PHEMT)",

author = "Jones, \{K. A.\} and Lareau, \{R. T.\} and T. Monahan and Flemish, \{J. R.\} and Pfeffer, \{R. L.\} and Sherriff, \{R. E.\} and Litton, \{C. W.\} and Jones, \{R. L.\} and Stutz, \{C. E.\} and Look, \{D. C.\}",

year = "1995",

month = nov,

doi = "10.1007/BF02676825",

language = "English",

volume = "24",

pages = "1641--1648",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "11",

}

TY - JOUR

T1 - Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures

AU - Jones, K. A.

AU - Lareau, R. T.

AU - Monahan, T.

AU - Flemish, J. R.

AU - Pfeffer, R. L.

AU - Sherriff, R. E.

AU - Litton, C. W.

AU - Jones, R. L.

AU - Stutz, C. E.

AU - Look, D. C.

PY - 1995/11

Y1 - 1995/11

KW - GaAs/AlGaAs

KW - GaAs/InGaP

KW - high electron mobility transistor (HEMT)

KW - organometallic vapor phase epitaxy (OMVPE)

KW - pseudo-morphic high electron mobility transistor (PHEMT)

UR - https://www.scopus.com/pages/publications/51249165224

UR - https://www.scopus.com/inward/citedby.url?scp=51249165224&partnerID=8YFLogxK

U2 - 10.1007/BF02676825

DO - 10.1007/BF02676825

M3 - Article

AN - SCOPUS:51249165224

SN - 0361-5235

VL - 24

SP - 1641

EP - 1648

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 11

ER -

Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures

ASJC Scopus Subject Areas

Keywords

Access to Document

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