@article{288f8710270c48a0b6fe1211f19a31de,
title = "Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures",
keywords = "GaAs/AlGaAs, GaAs/InGaP, high electron mobility transistor (HEMT), organometallic vapor phase epitaxy (OMVPE), pseudo-morphic high electron mobility transistor (PHEMT)",
author = "Jones, \{K. A.\} and Lareau, \{R. T.\} and T. Monahan and Flemish, \{J. R.\} and Pfeffer, \{R. L.\} and Sherriff, \{R. E.\} and Litton, \{C. W.\} and Jones, \{R. L.\} and Stutz, \{C. E.\} and Look, \{D. C.\}",
year = "1995",
month = nov,
doi = "10.1007/BF02676825",
language = "English",
volume = "24",
pages = "1641--1648",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
number = "11",
}