TY - GEN
T1 - Critical Comparison of Carrier Lifetime at 1.55 μm of Ion-Irradiated InGaAs, Cold-Implanted InGaAsP, and ErAs:GaAs
AU - Martin, M.
AU - Brown, E. R.
AU - Mangeney, J.
AU - Fekecs, A.
AU - Ares, R.
AU - Morris, D.
PY - 2012
Y1 - 2012
N2 - We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured with a fiber-based 1550 nm time-resolved differential transmission (?T) set-up. The InGaAs-based materials show a positive ?T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ?T consistent with a two-photon absorption process.
AB - We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured with a fiber-based 1550 nm time-resolved differential transmission (?T) set-up. The InGaAs-based materials show a positive ?T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ?T consistent with a two-photon absorption process.
UR - https://www.scopus.com/pages/publications/84873426252
UR - https://www.scopus.com/inward/citedby.url?scp=84873426252&partnerID=8YFLogxK
U2 - 10.1109/IRMMW-THz.2012.6380277
DO - 10.1109/IRMMW-THz.2012.6380277
M3 - Conference contribution
AN - SCOPUS:84873426252
SN - 9781467315975
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
BT - IRMMW-THz 2012 - 37th International Conference on Infrared, Millimeter, and Terahertz Waves
T2 - 37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012
Y2 - 23 September 2012 through 28 September 2012
ER -