Deep-center hopping conduction in GaN

D. C. Look; D. C. Reynolds; W. Kim; Ö Aktas; A. Botchkarev; A. Salvador; H. Morkoç

doi:10.1063/1.363128

Deep-center hopping conduction in GaN

D. C. Look, D. C. Reynolds, W. Kim, Ö Aktas, A. Botchkarev, A. Salvador, H. Morkoç

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2960-2963
Number of pages	4
Journal	Journal of Applied Physics
Volume	80
Issue number	5
DOIs	https://doi.org/10.1063/1.363128
State	Published - Sep 1 1996

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.363128

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title = "Deep-center hopping conduction in GaN",

author = "Look, \{D. C.\} and Reynolds, \{D. C.\} and W. Kim and {\"O} Aktas and A. Botchkarev and A. Salvador and H. Morko{\c c}",

year = "1996",

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doi = "10.1063/1.363128",

language = "English",

volume = "80",

pages = "2960--2963",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Deep-center hopping conduction in GaN

AU - Look, D. C.

AU - Reynolds, D. C.

AU - Kim, W.

AU - Aktas, Ö

AU - Botchkarev, A.

AU - Salvador, A.

AU - Morkoç, H.

PY - 1996/9/1

Y1 - 1996/9/1

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U2 - 10.1063/1.363128

DO - 10.1063/1.363128

M3 - Article

AN - SCOPUS:0001283903

SN - 0021-8979

VL - 80

SP - 2960

EP - 2963

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Deep-center hopping conduction in GaN

ASJC Scopus Subject Areas

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