Deep centers in a free-standing GaN layer

Z. Q. Fang; D. C. Look; P. Visconti; D. F. Wang; C. Z. Lu; F. Yun; H. Morkoç; S. S. Park; K. Y. Lee

doi:10.1063/1.1361273

Deep centers in a free-standing GaN layer

Z. Q. Fang, D. C. Look, P. Visconti, D. F. Wang, C. Z. Lu, F. Yun, H. Morkoç, S. S. Park, K. Y. Lee

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2178-2180
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	15
DOIs	https://doi.org/10.1063/1.1361273
State	Published - Apr 9 2001

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1361273

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title = "Deep centers in a free-standing GaN layer",

author = "Fang, {Z. Q.} and Look, {D. C.} and P. Visconti and Wang, {D. F.} and Lu, {C. Z.} and F. Yun and H. Morko{\c c} and Park, {S. S.} and Lee, {K. Y.}",

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T1 - Deep centers in a free-standing GaN layer

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Visconti, P.

AU - Wang, D. F.

AU - Lu, C. Z.

AU - Yun, F.

AU - Morkoç, H.

AU - Park, S. S.

AU - Lee, K. Y.

PY - 2001/4/9

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EP - 2180

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

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Deep centers in a free-standing GaN layer

ASJC Scopus Subject Areas

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