Deep Centers in As-grown and Electron-irradiated N-GaN

Z. Q. Fang; L. Polenta; J. W. Hemsky; D. C. Look

doi:10.1109/SIM.2000.939193

Deep Centers in As-grown and Electron-irradiated N-GaN

Z. Q. Fang, L. Polenta, J. W. Hemsky, D. C. Look

Physics

Research output: Contribution to conference › Paper › peer-review

Abstract

Deep centers in as-grown and electron-irradiated n-GaN on sapphire have been characterized by deep level transient spectroscopy. Electron-irradiation (Elf) creates V-N-related centers with activation energy E-T=0.06 eV and a center with E-T=0.85 eV, which might be related to N-I. Deep centers in as-grown materials show a close connection with high dislocation densities and some of them indeed behave like "line-defects". Based on comparisons with El-induced centers, some deep centers in as-grown materials are identified as possible point defects.

Original language	English
Pages	35-42
Number of pages	8
DOIs	https://doi.org/10.1109/SIM.2000.939193
State	Published - 2000
Event	11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia Duration: Jul 3 2000 → Jul 7 2000

Conference

Conference	11th International Semiconducting and Insulating Materials Conference, SIMC 2000
Country/Territory	Australia
City	Canberra
Period	7/3/00 → 7/7/00

ASJC Scopus Subject Areas

General Engineering

Keywords

Capacitance-voltage characteristics
Gallium nitride
Gold
MOCVD
Ohmic contacts
Optical devices
Optical materials
Sandwich structures
Schottky barriers
Spectroscopy

Disciplines

Semiconductor and Optical Materials

Access to Document

10.1109/SIM.2000.939193

Cite this

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title = "Deep Centers in As-grown and Electron-irradiated N-GaN",

abstract = " Deep centers in as-grown and electron-irradiated n-GaN on sapphire have been characterized by deep level transient spectroscopy. Electron-irradiation (Elf) creates V-N-related centers with activation energy E-T=0.06 eV and a center with E-T=0.85 eV, which might be related to N-I. Deep centers in as-grown materials show a close connection with high dislocation densities and some of them indeed behave like {"}line-defects{"}. Based on comparisons with El-induced centers, some deep centers in as-grown materials are identified as possible point defects.",

keywords = "Capacitance-voltage characteristics, Gallium nitride, Gold, MOCVD, Ohmic contacts, Optical devices, Optical materials, Sandwich structures, Schottky barriers, Spectroscopy",

author = "Fang, {Z. Q.} and L. Polenta and Hemsky, {J. W.} and Look, {D. C.}",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",

year = "2000",

doi = "10.1109/SIM.2000.939193",

language = "English",

pages = "35--42",

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T1 - Deep Centers in As-grown and Electron-irradiated N-GaN

AU - Fang, Z. Q.

AU - Polenta, L.

AU - Hemsky, J. W.

AU - Look, D. C.

PY - 2000

Y1 - 2000

N2 - Deep centers in as-grown and electron-irradiated n-GaN on sapphire have been characterized by deep level transient spectroscopy. Electron-irradiation (Elf) creates V-N-related centers with activation energy E-T=0.06 eV and a center with E-T=0.85 eV, which might be related to N-I. Deep centers in as-grown materials show a close connection with high dislocation densities and some of them indeed behave like "line-defects". Based on comparisons with El-induced centers, some deep centers in as-grown materials are identified as possible point defects.

AB - Deep centers in as-grown and electron-irradiated n-GaN on sapphire have been characterized by deep level transient spectroscopy. Electron-irradiation (Elf) creates V-N-related centers with activation energy E-T=0.06 eV and a center with E-T=0.85 eV, which might be related to N-I. Deep centers in as-grown materials show a close connection with high dislocation densities and some of them indeed behave like "line-defects". Based on comparisons with El-induced centers, some deep centers in as-grown materials are identified as possible point defects.

KW - Capacitance-voltage characteristics

KW - Gallium nitride

KW - Gold

KW - MOCVD

KW - Ohmic contacts

KW - Optical devices

KW - Optical materials

KW - Sandwich structures

KW - Schottky barriers

KW - Spectroscopy

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U2 - 10.1109/SIM.2000.939193

DO - 10.1109/SIM.2000.939193

M3 - Paper

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EP - 42

T2 - 11th International Semiconducting and Insulating Materials Conference, SIMC 2000

Y2 - 3 July 2000 through 7 July 2000

ER -

Deep Centers in As-grown and Electron-irradiated N-GaN

Abstract

Conference

ASJC Scopus Subject Areas

Keywords

Disciplines

Access to Document

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