Deep Centers in as Grown and Electron-Irradiated N-GaN

Z-Q. Fang, L. Polenta, Joseph Hemsky, C. Look

Research output: Other contribution

Original language	American English
State	Published - Jan 1 2000

Keywords

@misc{dc865e460c6a44beb2c6f01e0836e66c,

title = "Deep Centers in as Grown and Electron-Irradiated N-GaN",

keywords = "Crystals, Defects, Dislocations, Doped GaN, Level, Molecular-Beam Epitaxy, Traps, Vapor-Phase Epitaxy",

author = "Z-Q. Fang and L. Polenta and Joseph Hemsky and C. Look",

year = "2000",

month = jan,

day = "1",

language = "American English",

type = "Other",

}

TY - GEN

T1 - Deep Centers in as Grown and Electron-Irradiated N-GaN

AU - Fang, Z-Q.

AU - Polenta, L.

AU - Hemsky, Joseph

AU - Look, C.

PY - 2000/1/1

Y1 - 2000/1/1

KW - Crystals

KW - Defects

KW - Dislocations

KW - Doped GaN

KW - Level

KW - Molecular-Beam Epitaxy

KW - Traps

KW - Vapor-Phase Epitaxy

UR - https://corescholar.libraries.wright.edu/physics/374

M3 - Other contribution

ER -