Deep centers in n-GaN grown by reactive molecular beam epitaxy

Z. Q. Fang; D. C. Look; W. Kim; Z. Fan; A. Botchkarev; H. Morkoç

doi:10.1063/1.121274

Deep centers in n-GaN grown by reactive molecular beam epitaxy

Z. Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev, H. Morkoç

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2277-2279
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	18
DOIs	https://doi.org/10.1063/1.121274
State	Published - 1998

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Deep centers in n-GaN grown by reactive molecular beam epitaxy",

author = "Fang, \{Z. Q.\} and Look, \{D. C.\} and W. Kim and Z. Fan and A. Botchkarev and H. Morko{\c c}",

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language = "English",

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pages = "2277--2279",

journal = "Applied Physics Letters",

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AU - Fang, Z. Q.

AU - Look, D. C.

AU - Kim, W.

AU - Fan, Z.

AU - Botchkarev, A.

AU - Morkoç, H.

PY - 1998

Y1 - 1998

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VL - 72

SP - 2277

EP - 2279

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Deep centers in n-GaN grown by reactive molecular beam epitaxy

ASJC Scopus Subject Areas

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