Deep centers in undoped semi-insulating InP

Z. Q. Fang; D. C. Look; M. Uchida; K. Kainosho; O. Oda

doi:10.1007/s11664-998-0152-x

Deep centers in undoped semi-insulating InP

Z. Q. Fang, D. C. Look, M. Uchida, K. Kainosho, O. Oda

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	L68-L71
Journal	Journal of Electronic Materials
Volume	27
Issue number	10
DOIs	https://doi.org/10.1007/s11664-998-0152-x
State	Published - 1998

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-998-0152-x

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@article{6eb42dc9720b4503971f2df0bd27e1d4,

title = "Deep centers in undoped semi-insulating InP",

author = "Fang, {Z. Q.} and Look, {D. C.} and M. Uchida and K. Kainosho and O. Oda",

year = "1998",

doi = "10.1007/s11664-998-0152-x",

language = "English",

volume = "27",

pages = "L68--L71",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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}

TY - JOUR

T1 - Deep centers in undoped semi-insulating InP

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Uchida, M.

AU - Kainosho, K.

AU - Oda, O.

PY - 1998

Y1 - 1998

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DO - 10.1007/s11664-998-0152-x

M3 - Article

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SN - 0361-5235

VL - 27

SP - L68-L71

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Deep centers in undoped semi-insulating InP

ASJC Scopus Subject Areas

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