Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; Z. Q. Fang; D. C. Look; S. S. Park; J. H. Han

doi:10.1063/1.1511823

Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Z. Q. Fang, D. C. Look, S. S. Park, J. H. Han

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	5241-5247
Number of pages	7
Journal	Journal of Applied Physics
Volume	92
Issue number	9
DOIs	https://doi.org/10.1063/1.1511823
State	Published - Nov 1 2002

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.1511823

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@article{42093e74d4f54f399df5eb51c35e4594,

title = "Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Fang, {Z. Q.} and Look, {D. C.} and Park, {S. S.} and Han, {J. H.}",

year = "2002",

month = nov,

day = "1",

doi = "10.1063/1.1511823",

language = "English",

volume = "92",

pages = "5241--5247",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "9",

}

TY - JOUR

T1 - Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Park, S. S.

AU - Han, J. H.

PY - 2002/11/1

Y1 - 2002/11/1

UR - http://www.scopus.com/inward/record.url?scp=18744365579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18744365579&partnerID=8YFLogxK

U2 - 10.1063/1.1511823

DO - 10.1063/1.1511823

M3 - Article

AN - SCOPUS:18744365579

SN - 0021-8979

VL - 92

SP - 5241

EP - 5247

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

ASJC Scopus Subject Areas

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