| Original language | English |
|---|---|
| Pages (from-to) | 5241-5247 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 92 |
| Issue number | 9 |
| DOIs | |
| State | Published - Nov 1 2002 |
ASJC Scopus Subject Areas
- General Physics and Astronomy
Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy
- A. Y. Polyakov
- , N. B. Smirnov
- , A. V. Govorkov
- , Z. Q. Fang
- , D. C. Look
- , S. S. Park
- , J. H. Han
Research output: Contribution to journal › Article › peer-review