Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Z. Q. Fang, D. C. Look, R. J. Molnar, A. V. Osinsky

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)6580-6584
Number of pages5
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
StatePublished - May 15 2002

ASJC Scopus Subject Areas

  • General Physics and Astronomy

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