Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; Z. Q. Fang; D. C. Look; R. J. Molnar; A. V. Osinsky

doi:10.1063/1.1468909

Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

A. Y. Polyakov
, N. B. Smirnov
, A. V. Govorkov
, Z. Q. Fang
, D. C. Look
, R. J. Molnar
, A. V. Osinsky

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	6580-6584
Number of pages	5
Journal	Journal of Applied Physics
Volume	91
Issue number	10 I
DOIs	https://doi.org/10.1063/1.1468909
State	Published - May 15 2002

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.1468909

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title = "Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy",

author = "Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Govorkov, \{A. V.\} and Fang, \{Z. Q.\} and Look, \{D. C.\} and Molnar, \{R. J.\} and Osinsky, \{A. V.\}",

year = "2002",

month = may,

day = "15",

doi = "10.1063/1.1468909",

language = "English",

volume = "91",

pages = "6580--6584",

journal = "Journal of Applied Physics",

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T1 - Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Molnar, R. J.

AU - Osinsky, A. V.

PY - 2002/5/15

Y1 - 2002/5/15

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UR - https://www.scopus.com/pages/publications/0037094699#tab=citedBy

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DO - 10.1063/1.1468909

M3 - Article

AN - SCOPUS:0037094699

SN - 0021-8979

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SP - 6580

EP - 6584

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 I

ER -

Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

ASJC Scopus Subject Areas

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