Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; Z. Q. Fang; D. C. Look; R. J. Molnar; A. V. Osinsky

doi:10.1063/1.1468909

Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Z. Q. Fang, D. C. Look, R. J. Molnar, A. V. Osinsky

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	6580-6584
Number of pages	5
Journal	Journal of Applied Physics
Volume	91
Issue number	10 I
DOIs	https://doi.org/10.1063/1.1468909
State	Published - May 15 2002

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.1468909

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title = "Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy",

author = "Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Govorkov, \{A. V.\} and Fang, \{Z. Q.\} and Look, \{D. C.\} and Molnar, \{R. J.\} and Osinsky, \{A. V.\}",

year = "2002",

month = may,

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doi = "10.1063/1.1468909",

language = "English",

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journal = "Journal of Applied Physics",

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T1 - Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Molnar, R. J.

AU - Osinsky, A. V.

PY - 2002/5/15

Y1 - 2002/5/15

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DO - 10.1063/1.1468909

M3 - Article

AN - SCOPUS:0037094699

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EP - 6584

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 I

ER -

Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

ASJC Scopus Subject Areas

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