Deep level characteristics in n-GaN with inductively coupled plasma damage

H. K. Cho, F. A. Khan, I. Adesida, Z. Q. Fang, D. C. Look

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number155314
JournalJournal of Physics D: Applied Physics
Volume41
Issue number15
DOIs
StatePublished - Aug 7 2008

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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