Deep level characteristics in n-GaN with inductively coupled plasma damage

H. K. Cho; F. A. Khan; I. Adesida; Z. Q. Fang; D. C. Look

doi:10.1088/0022-3727/41/15/155314

Deep level characteristics in n-GaN with inductively coupled plasma damage

H. K. Cho, F. A. Khan, I. Adesida, Z. Q. Fang, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	155314
Journal	Journal of Physics D: Applied Physics
Volume	41
Issue number	15
DOIs	https://doi.org/10.1088/0022-3727/41/15/155314
State	Published - Aug 7 2008

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/41/15/155314

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AU - Look, D. C.

PY - 2008/8/7

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Deep level characteristics in n-GaN with inductively coupled plasma damage

ASJC Scopus Subject Areas

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