Deep level characteristics in n-GaN with inductively coupled plasma damage

TY - JOUR

T1 - Deep level characteristics in n-GaN with inductively coupled plasma damage

AU - Cho, H. K.

AU - Khan, F. A.

AU - Adesida, I.

AU - Fang, Z. Q.

AU - Look, D. C.

PY - 2008/8/7

Y1 - 2008/8/7

UR - https://www.scopus.com/pages/publications/49749153459

UR - https://www.scopus.com/pages/publications/49749153459#tab=citedBy

U2 - 10.1088/0022-3727/41/15/155314

DO - 10.1088/0022-3727/41/15/155314

M3 - Article

AN - SCOPUS:49749153459

SN - 0022-3727

VL - 41

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 15

M1 - 155314

ER -