Deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques

Buguo Wang; David Look; Kevin Leedy

doi:10.1063/1.5049820

Deep level defects in β-Ga₂O₃ pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques

Buguo Wang, David Look, Kevin Leedy

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	105103
Journal	Journal of Applied Physics
Volume	125
Issue number	10
DOIs	https://doi.org/10.1063/1.5049820
State	Published - Mar 14 2019

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.5049820

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title = "Deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques",

author = "Buguo Wang and David Look and Kevin Leedy",

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year = "2019",

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doi = "10.1063/1.5049820",

language = "English",

volume = "125",

journal = "Journal of Applied Physics",

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T1 - Deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques

AU - Wang, Buguo

AU - Look, David

AU - Leedy, Kevin

PY - 2019/3/14

Y1 - 2019/3/14

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 105103

ER -

Deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques

ASJC Scopus Subject Areas

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Deep level defects in β-Ga₂O₃ pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques