Deep level near EC - 0.55 eV in undoped 4H-SiC substrates

W. C. Mitchel; William D. Mitchell; S. R. Smith; G. Landis; A. O. Evwaraye; Z. Q. Fang; D. C. Look; J. R. Sizelove

doi:10.4028/0-87849-425-1.505

Deep level near E_C - 0.55 eV in undoped 4H-SiC substrates

W. C. Mitchel, William D. Mitchell, S. R. Smith, G. Landis, A. O. Evwaraye, Z. Q. Fang, D. C. Look, J. R. Sizelove

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Publisher	Trans Tech Publications Ltd
Pages	505-508
Number of pages	4
Edition	PART 1
ISBN (Print)	9780878494255
DOIs	https://doi.org/10.4028/0-87849-425-1.505
State	Published - 2006
Externally published	Yes
Event	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States Duration: Sep 18 2005 → Sep 23 2005

Publication series

Name	Materials Science Forum
Number	PART 1
Volume	527-529
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Country/Territory	United States
City	Pittsburgh, PA
Period	9/18/05 → 9/23/05

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Hall effect
Intrinsic defects
Semi-insulating SiC

Access to Document

10.4028/0-87849-425-1.505

Cite this

Mitchel, W. C., Mitchell, W. D., Smith, S. R., Landis, G., Evwaraye, A. O., Fang, Z. Q., Look, D. C., & Sizelove, J. R. (2006). Deep level near E_C - 0.55 eV in undoped 4H-SiC substrates. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 505-508). (Materials Science Forum; Vol. 527-529, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.505

Deep level near E_C - 0.55 eV in undoped 4H-SiC substrates. / Mitchel, W. C.; Mitchell, William D.; Smith, S. R. et al.
Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. Trans Tech Publications Ltd, 2006. p. 505-508 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mitchel, WC, Mitchell, WD, Smith, SR, Landis, G, Evwaraye, AO, Fang, ZQ, Look, DC & Sizelove, JR 2006, Deep level near E_C - 0.55 eV in undoped 4H-SiC substrates. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, Trans Tech Publications Ltd, pp. 505-508, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05. https://doi.org/10.4028/0-87849-425-1.505

Mitchel WC, Mitchell WD, Smith SR, Landis G, Evwaraye AO, Fang ZQ et al. Deep level near E_C - 0.55 eV in undoped 4H-SiC substrates. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. Trans Tech Publications Ltd. 2006. p. 505-508. (Materials Science Forum; PART 1). doi: 10.4028/0-87849-425-1.505

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title = "Deep level near EC - 0.55 eV in undoped 4H-SiC substrates",

keywords = "Hall effect, Intrinsic defects, Semi-insulating SiC",

author = "Mitchel, {W. C.} and Mitchell, {William D.} and Smith, {S. R.} and G. Landis and Evwaraye, {A. O.} and Fang, {Z. Q.} and Look, {D. C.} and Sizelove, {J. R.}",

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